400-8006-805
Model number | ES3500-G V6 | ES3600-G V6 | |
Base specification | Capacity | 1920/3840/7680GB | 1600/3200/6400GB |
Form | U. 2,2.5 inches, 15mm thickness | ||
Port | PCIe 4.0 x4 | ||
NAND Flash | 3D TLC | ||
Basic property | Sequential read | Up to 7400MB/s | |
Sequential write | Up to 4800MB/s | ||
Random read | Up to 1700K IOPS(4KB) | ||
Random write | Up to 220K IOPS(4KB) | Up to 400K IOPS(4KB) | |
Read delay | Up to 68 μs | ||
Write delay | Up to 11 μs | ||
Life span | DWPD(5 years) | 1 | 3 |
Power dissipation | Average power consumption | Idle 8.5W, Active 17.5~21W | |
Reliability | Power failure protection | support | |
Particle failure protection | support | ||
Mean time to failure (MTBF) | 2.5 million hours | ||
Annual failure rate (AFR) | ≤0.35% | ||
Bit error rate (UBER) | 10−18 | ||
Peculiarity | Peculiarity | Supports 512/4096 series sector sizes Support online diagnosis and online refurbishment The NVMe command is used for upgrade | |
Advanced features | Intelligent multi-stream /SR-IOV/ Atomic write /TRIM, etc |